Invention Grant
- Patent Title: High bandwidth double-pumped memory
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Application No.: US16138174Application Date: 2018-09-21
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Publication No.: US10658029B2Publication Date: 2020-05-19
- Inventor: Hoan Huu Nguyen , Francois Ibrahim Atallah , Keith Alan Bowman , Hari Rao
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Patterson & Sheridan, LLP
- Main IPC: G11C11/4091
- IPC: G11C11/4091 ; G11C7/06 ; G11C11/419 ; G11C11/408 ; G11C8/08 ; G11C8/10 ; G11C16/26

Abstract:
Certain aspects of the present disclosure provide apparatus and methods for performing memory read operations. One example method generally includes precharging a plurality of memory columns during a precharging phase of a read access cycle. The method also includes sensing first data stored in a first memory cell of a first memory column of the plurality of memory columns during a memory read phase of the read access cycle, and sensing second data stored in a second memory cell of a second memory column of the plurality of memory columns during the same memory read phase of the read access cycle.
Public/Granted literature
- US20200098422A1 HIGH BANDWIDTH DOUBLE-PUMPED MEMORY Public/Granted day:2020-03-26
Information query
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