- Patent Title: Conductive paste for semiconductor device and preparation method
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Application No.: US16297620Application Date: 2019-03-09
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Publication No.: US10658090B2Publication Date: 2020-05-19
- Inventor: Jie Zhang , Xiaoli Liu , Fengzhen Sun , Delin Li
- Applicant: Soltrium Advanced Materials Technology, Ltd. Suzhou
- Assignee: Soltrium Advanced Materials Technology, Ltd
- Current Assignee: Soltrium Advanced Materials Technology, Ltd
- Agent Fang Wu
- Main IPC: H01B1/22
- IPC: H01B1/22 ; H01L31/0216 ; H01L31/0224 ; H01L31/068 ; H01L31/18 ; B22F7/08

Abstract:
A front-side conductive paste for a crystalline silicon solar cell chip is provided. The front-side conductive paste for a crystalline silicon solar cell chip includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent. The oxide etching agent contains at least 10-40% of MgO, 0.1-5% of PbO, and 5-30% of Li2O based on 100% by mole, with the molar ratio of MgO:PbO being 10:5˜40:0.1, and the mole ratio of MgO:Li2O being 10:30˜40:5. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.
Public/Granted literature
- US20190304619A1 CONDUCTIVE PASTE FOR SEMICONDUCTOR DEVICE AND PREPARATION METHOD Public/Granted day:2019-10-03
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