Invention Grant
- Patent Title: Defect-free heterogeneous substrates
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Application No.: US15756577Application Date: 2015-09-03
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Publication No.: US10658177B2Publication Date: 2020-05-19
- Inventor: Di Liang
- Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Hewlett Packard Enterprise Patent Department
- International Application: PCT/US2015/048365 WO 20150903
- International Announcement: WO2017/039674 WO 20170309
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/764 ; H01L29/06

Abstract:
In example implementations of a heterogeneous substrate, the heterogeneous substrate includes a first material having an air trench, a second material coupled to the first material, a dielectric mask on a first portion of the second material and an active region that is grown on a remaining portion of the second material. An air gap may be formed in the air trench by the second material coupled to the first material. Defects in the second material may be contained to an area below the dielectric mask and the active region may remain defect free.
Public/Granted literature
- US20180247812A1 DEFECT-FREE HETEROGENEOUS SUBSTRATES Public/Granted day:2018-08-30
Information query
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