Invention Grant
- Patent Title: Electrical device including a through-silicon via structure
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Application No.: US15858723Application Date: 2017-12-29
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Publication No.: US10658280B2Publication Date: 2020-05-19
- Inventor: Wen-Long Lu
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L25/065 ; H01L27/12 ; H01L21/768 ; H01L23/48 ; H01L21/48 ; H01L23/373

Abstract:
An electrical device includes a substrate and a via. The substrate has a first surface and defines a recess in the first surface. The via is disposed in the recess. The via includes an insulation layer, a first conductive layer and a second conductive layer. The insulation layer is disposed on the first surface of the substrate and extends at least to a sidewall of the recess. The first conductive layer is disposed adjacent to the insulation layer and extends over at least a portion of the first surface. The second conductive layer is disposed adjacent to the first conductive layer and extends over at least a portion of the first surface. The second conductive layer has a negative coefficient of thermal expansion (CTE).
Public/Granted literature
- US20190206778A1 ELECTRICAL DEVICE Public/Granted day:2019-07-04
Information query
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