Electrical device including a through-silicon via structure
Abstract:
An electrical device includes a substrate and a via. The substrate has a first surface and defines a recess in the first surface. The via is disposed in the recess. The via includes an insulation layer, a first conductive layer and a second conductive layer. The insulation layer is disposed on the first surface of the substrate and extends at least to a sidewall of the recess. The first conductive layer is disposed adjacent to the insulation layer and extends over at least a portion of the first surface. The second conductive layer is disposed adjacent to the first conductive layer and extends over at least a portion of the first surface. The second conductive layer has a negative coefficient of thermal expansion (CTE).
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