Invention Grant
- Patent Title: Image sensors including shifted isolation structures
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Application No.: US16275405Application Date: 2019-02-14
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Publication No.: US10658411B2Publication Date: 2020-05-19
- Inventor: Junghyung Pyo , BumSuk Kim , Kyungho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@347bb41b
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region. The image sensor includes first and second photoelectric conversion elements in the pixel region. The image sensor includes an isolation region between the first and second photoelectric conversion elements. The isolation region is off-center with respect to the pixel region.
Public/Granted literature
- US20190181166A1 IMAGE SENSORS Public/Granted day:2019-06-13
Information query
IPC分类:
