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    SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
    1.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20250028456A1

    公开(公告)日：2025-01-23

    申请号：US18907760

    申请日：2024-10-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyungho Lee ,  Kiheung Kim ,  Taeyoung Oh ,  Jongcheol Kim ,  Hyongryol Hwang

    IPC: G06F3/06

    Abstract: A semiconductor memory device includes a memory cell array including a plurality of memory cell rows and a row hammer management circuit. The row hammer management circuit stores counted values in count cells of each of the plurality of memory cell rows as count data, and performs an internal read-update-write operation to read the count data from the count cells of a target memory cell row from among the plurality of memory cell rows, to update the count data that was read to obtain updated count data, and to write the updated count data in the count cells of the target memory cell row. The row hammer management circuit includes a hammer address queue. The row hammer management circuit changes the updated count data randomly, based on an event signal indicating a state change of the hammer address queue.

    Image sensor with pixel separation structure
    2.
    发明授权
    Image sensor with pixel separation structure 有权

    公开(公告)号：US12170296B2

    公开(公告)日：2024-12-17

    申请号：US17491705

    申请日：2021-10-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seungjoon Lee ,  Jung Bin Yun ,  Kyungho Lee ,  Jihun Kim ,  Junghyung Pyo

    IPC: H01L27/146

    Abstract: Disclosed is an image sensor comprising a semiconductor substrate that includes first through fourth pixel regions, each including first through fourth photoelectric conversion sections, and a pixel separation structure disposed in the semiconductor substrate and separating the first through fourth pixel regions from each other. The second pixel region is spaced apart in a first direction from the first pixel region. The fourth pixel region is spaced apart in a second direction from the first pixel region. The second direction intersects the first direction. The semiconductor substrate includes first impurity sections disposed on corresponding central portions of the first through fourth pixel regions, and a second impurity section disposed between the second and fourth pixel regions. Impurities doped in the first impurity sections have a conductivity type different from that of impurities doped in the second impurity section.

    Semiconductor memory devices and memory systems including the same
    3.
    发明授权
    Semiconductor memory devices and memory systems including the same 有权

    公开(公告)号：US12118221B2

    公开(公告)日：2024-10-15

    申请号：US18136915

    申请日：2023-04-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jongcheol Kim ,  Kiheung Kim ,  Taeyoung Oh ,  Kyungho Lee

    IPC: G06F12/00 ,  G06F3/06

    CPC classification number: G06F3/0632 ,  G06F3/0604 ,  G06F3/0679

    Abstract: A semiconductor memory device includes a memory cell array, a row hammer management circuit and a refresh control circuit. The row hammer management circuit automatically stores random count data in count cells of each of a plurality of memory cell rows during a power-up sequence of the semiconductor memory device and determines counted values by counting a number of times of access associated with each of the plurality of memory cell rows in response to an active command from an external memory controller and stores the counted values in the count cells of each of the plurality of memory cell rows as count data. The refresh control circuit receives a hammer address and performs a hammer refresh operation on one or more of the plurality of memory cell rows that are physically adjacent to a memory cell row that corresponds to the hammer address.

    Image sensor
    4.
    发明授权
    Image sensor 有权

    公开(公告)号：US11678082B2

    公开(公告)日：2023-06-13

    申请号：US17139427

    申请日：2020-12-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eun Sub Shim ,  Kyungho Lee

    IPC: H04N5/58 ,  H04N25/589 ,  H04N23/10 ,  H04N23/76 ,  H04N25/44 ,  H04N25/59 ,  H04N25/585 ,  H04N25/616 ,  H04N25/778

    CPC classification number: H04N25/589 ,  H04N23/10 ,  H04N23/76 ,  H04N25/44 ,  H04N25/585 ,  H04N25/59 ,  H04N25/616 ,  H04N25/778

    Abstract: An image sensor includes a pixel array including a plurality of unit pixels arranged along a plurality of rows and a plurality of columns. Each of the unit pixels includes a photoelectric conversion element generating and accumulating photocharges, a charge detection node receiving the photocharges accumulated in the photoelectric conversion element, a readout circuit converting the photocharges accumulated in and output from the charge detection node into an electrical pixel signal, the readout circuit outputting the electrical pixel signal, a capacitive element, and a switching element controlling connection between the charge detection node and the capacitive element. Each of the rows of the pixel array includes first pixels connected to a first conversion gain control line and second pixels connected to a second conversion gain control line.

    Image sensor including plurality of auto focusing pixel groups
    5.
    发明授权
    Image sensor including plurality of auto focusing pixel groups 有权

    公开(公告)号：US11671705B2

    公开(公告)日：2023-06-06

    申请号：US17941302

    申请日：2022-09-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eunsub Shim ,  Kyungho Lee ,  Masato Fujita

    IPC: H04N23/67 ,  G03B13/16 ,  H01L27/146

    CPC classification number: H04N23/67 ,  G03B13/16 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14647

    Abstract: An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.

    Image sensor
    6.
    发明授权
    Image sensor 有权

    公开(公告)号：US11616934B2

    公开(公告)日：2023-03-28

    申请号：US17509696

    申请日：2021-10-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junghyung Pyo ,  Kyungho Lee

    IPC: H04N5/374 ,  H04N5/351 ,  H04N9/04 ,  H04N5/369 ,  G06T3/40 ,  H04N5/3745

    Abstract: An image sensor includes a pixel array with pixels arranged in a first direction and a second direction, intersecting the first direction. Each of the pixels includes a photodiode, a pixel circuit below the photodiode, and a color filter on or above the photodiode. A logic circuit acquires a pixel signal from the pixels through a plurality of column lines extending in the second direction. The pixels include color pixels and white pixels, the number of white pixels being greater than the number of color pixels. The pixel circuit includes a floating diffusion in which charges of the photodiode are accumulated and transistors outputting a voltage corresponding to amounts of charges in the floating diffusion. Each of the color pixels shares the floating diffusion with at least one neighboring white pixel, adjacent thereto in the second direction, among the white pixels.

    Image sensor
    7.
    发明授权
    Image sensor 有权

    公开(公告)号：US10886318B2

    公开(公告)日：2021-01-05

    申请号：US16699150

    申请日：2019-11-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junghyung Pyo ,  Kyungho Lee

    IPC: H01L27/146

    Abstract: An image sensor is disclosed. The image sensor may include a semiconductor substrate including a first pixel group region and a second pixel group region, the first pixel group region including first pixel regions to sense a first light, the second pixel group region including second pixel regions to sense a second light, each of the first and second pixel regions arranged in n columns and m rows, a pixel isolation structure disposed in the semiconductor substrate to separate the first and second pixel regions from each other, first and second photoelectric conversion regions disposed in each of the first and second pixel regions of the semiconductor substrate, and a first separation structure disposed in each of the first pixel regions and in the semiconductor substrate between the first and second photoelectric conversion regions. The first separation structure may be spaced apart from the pixel isolation structure.

    IMAGE SENSORS WITH LIGHT CHANNELING REFLECTIVE LAYERS THEREIN
    8.
    发明申请
    IMAGE SENSORS WITH LIGHT CHANNELING REFLECTIVE LAYERS THEREIN 审中-公开

    公开(公告)号：US20200279885A1

    公开(公告)日：2020-09-03

    申请号：US16878208

    申请日：2020-05-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyungho Lee ,  Hyuk An ,  Hyuk Soon Choi

    IPC: H01L27/146

    Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

    Image sensors including shifted isolation structures
    9.
    发明授权
    Image sensors including shifted isolation structures 有权

    公开(公告)号：US10658411B2

    公开(公告)日：2020-05-19

    申请号：US16275405

    申请日：2019-02-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junghyung Pyo ,  BumSuk Kim ,  Kyungho Lee

    IPC: H01L27/146

    Abstract: Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region. The image sensor includes first and second photoelectric conversion elements in the pixel region. The image sensor includes an isolation region between the first and second photoelectric conversion elements. The isolation region is off-center with respect to the pixel region.

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