Phase change memory apparatuses include memory cells including phase change material, bit lines electrically coupled to aligned groups of at least some of the memory cells, and heating elements electrically coupled to the phase change material of the memory cells. The heating elements include vertical portions extending in a bit line direction. Additional phase change memory apparatuses include dummy columns positioned between memory columns and base contact columns. The dummy columns include phase change memory cells and lack heating elements coupled to the phase change memory cells thereof. Additional phase change memory apparatuses include heating elements operably coupled to phase change memory cells. An interfacial area between the heating elements and the phase change memory cells has a length that is independent of a bit line width. Methods relate to forming such phase change memory apparatuses.