Invention Grant
- Patent Title: Semiconductor structure and method of forming the same
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Application No.: US16028386Application Date: 2018-07-05
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Publication No.: US10658458B2Publication Date: 2020-05-19
- Inventor: I-Ming Tseng , Chun-Hsien Lin , Wen-An Liang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONCIS CORP.
- Current Assignee: UNITED MICROELECTRONCIS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@74f6cd26
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/06 ; H01L21/8234 ; H01L29/78 ; H01L29/66
Abstract:
A method of forming a semiconductor structure is disclosed. A fin structure is formed on a substrate and a trench is formed in the fin structure. The trench has a top corner, an upper portion having an upper sidewall and a lower portion having a lower sidewall. A first dielectric layer is then formed on the substrate and fills the lower portion of the trench. After that, a second dielectric layer is formed on the substrate and covers the top corner and the upper sidewall of the trench. The second dielectric layer also covers an upper surface of the first dielectric layer.
Public/Granted literature
- US20180331177A1 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2018-11-15
Information query
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