An integrated circuit (IC) includes a semiconductor surface layer on a substrate including functional circuitry having circuit elements configured together with a metal-to-polysilicon capacitor on the semiconductor surface layer for realizing at least one circuit function. The metal-to-polysilicon capacitor includes a bottom plate including polysilicon, a capacitor dielectric including at least one capacitor dielectric layer on the bottom plate, a top plate on the capacitor dielectric, and contacts through a pre-metal dielectric layer that contact the top plate and contact the bottom plate. In lateral regions relative to the capacitor the capacitor dielectric layer has a thickness in a range between about 5% and about 50% of a thickness of the capacitor dielectric of the metal-to-polysilicon capacitor.