Invention Grant
- Patent Title: Fin field effect transistor device structure and method for forming the same
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Application No.: US16251642Application Date: 2019-01-18
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Publication No.: US10672665B2Publication Date: 2020-06-02
- Inventor: Shang-Wen Chang , Yi-Hsiung Lin , Yi-Hsun Chiu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L27/088 ; H01L21/768
Abstract:
A method for forming a FinFET device structure includes forming a first fin structure and a second fin structure on a substrate. The method also includes depositing a first spacer layer over the first and second fin structures. The method also includes growing a power rail between the bottom portion of the first fin structure and the bottom portion of the second fin structure. The method also includes forming a second spacer layer over the sidewalls of the first spacer layer and over the top surface of the power rail. The method also includes forming a first fin isolation structure over the power rail between the first and second fin structures. The method also includes forming a first contact structure over the first fin structure and a portion of the power rail. The method also includes forming a second contact structure over the second fin structure.
Public/Granted literature
- US20200105603A1 FIN FIELD EFFECT TRANSISTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2020-04-02
Information query
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