Invention Grant
- Patent Title: Nano-electromechanical system (NEMS) device structure and method for forming the same
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Application No.: US16009668Application Date: 2018-06-15
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Publication No.: US10676351B2Publication Date: 2020-06-09
- Inventor: Hsin-Ping Chen , Carlos H. Diaz , Ken-Ichi Goto , Shau-Lin Shue , Tai-I Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H04R23/00
- IPC: H04R23/00 ; B82B1/00 ; B81C1/00 ; B81B3/00 ; B82B3/00

Abstract:
A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a substrate and an interconnect structure formed over the substrate. The NEMS device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer, wherein the beam structure includes a plurality of strip structures. The NEMS device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.
Public/Granted literature
- US20180334383A1 NANO-ELECTROMECHANICAL SYSTEM (NEMS) DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2018-11-22
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