Invention Grant
- Patent Title: Phase revealing optical and X-ray semiconductor metrology
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Application No.: US16047818Application Date: 2018-07-27
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Publication No.: US10677586B2Publication Date: 2020-06-09
- Inventor: John Hench , Andrei Veldman
- Applicant: KLA-TENCOR CORPORATION
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Hodgson Russ LLP
- Main IPC: G01N21/94
- IPC: G01N21/94 ; G01B11/06 ; G01N23/083 ; G06T9/20 ; G01N21/95

Abstract:
The embodiments disclosed herein can enable a target on a semiconductor wafer to be reconstructed and/or imaged. A surface of a target on a semiconductor wafer is measured using a wafer metrology tool. A voxel map of the surface is fixed to match geometry measurements and using scattering density of expected materials. Uniform scaling of the scattering density of all fixed surface voxels can occur.
Public/Granted literature
- US20200080836A1 Phase Revealing Optical and X-Ray Semiconductor Metrology Public/Granted day:2020-03-12
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