REDUCTION OR ELIMINATION OF PATTERN PLACEMENT ERROR IN METROLOGY MEASUREMENTS

    公开(公告)号:US20230099105A1

    公开(公告)日:2023-03-30

    申请号:US18076375

    申请日:2022-12-06

    摘要: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.

    Multi-spot analysis system with multiple optical probes

    公开(公告)号:US11441893B2

    公开(公告)日:2022-09-13

    申请号:US16018355

    申请日:2018-06-26

    IPC分类号: G01B11/06 G02B6/36

    摘要: A system for analyzing a sample includes an illumination source with a plurality of transmitting optical fibers optically coupled to the illumination source and a detector with a plurality of receiving optical fibers optically coupled to the detector. The system further includes a plurality of probes coupled to respective ones of the plurality of transmitting optical fibers and respective ones of the plurality of receiving optical fibers. The plurality of probes are configured to illuminate respective portions of a surface of the sample and configured to receive illumination reflected, refracted, or radiated from the respective portions of the surface of the sample. The system may further include one or more switches and/or splitters configured to optically couple respective ones of the plurality of transmitting optical fibers to the illumination source and/or configured to optically couple respective ones of the plurality of receiving optical fibers to the detector.

    Vacuum hold-down apparatus for flattening bowed semiconductor wafers

    公开(公告)号:US11430687B2

    公开(公告)日:2022-08-30

    申请号:US16340634

    申请日:2019-03-25

    摘要: A vacuum hold-down apparatus retains a wafer in a desired position and orientation. A vacuum chuck assembly of the vacuum hold-down apparatus has a vacuum chuck surface with a vacuum communication aperture. A venturi vacuum generator is fixed with respect to the vacuum chuck assembly and communicates with the vacuum chuck surface via the vacuum communication aperture. A positive pressure fluid line communicates with the venturi vacuum generator.

    Scatterometry modeling in the presence of undesired diffraction orders

    公开(公告)号:US11422095B2

    公开(公告)日:2022-08-23

    申请号:US16286315

    申请日:2019-02-26

    摘要: A metrology system may receive a model for measuring one or more selected attributes of a target including features distributed in a selected pattern based on regression of spectroscopic scatterometry data from a scatterometry tool for a range of wavelengths. The metrology system may further generate a weighting function for the model to de-emphasize portions of the spectroscopic scatterometry data associated with wavelengths at which light captured by the scatterometry tool when measuring the target is predicted to include undesired diffraction orders. The metrology system may further direct the spectroscopic scatterometry tool to generate scatterometry data of one or more measurement targets including fabricated features distributed in the selected pattern. The metrology system may further measure the selected attributes for the one or more measurement targets based on regression of the scatterometry data of the one or more measurement targets to the model weighted by the weighting function.

    Automatic optimization of measurement accuracy through advanced machine learning techniques

    公开(公告)号:US11380594B2

    公开(公告)日:2022-07-05

    申请号:US15903693

    申请日:2018-02-23

    摘要: Machine learning techniques are used to predict values of fixed parameters when given reference values of critical parameters. For example, a neural network can be trained based on one or more critical parameters and a low-dimensional real-valued vector associated with a spectrum, such as a spectroscopic ellipsometry spectrum or a specular reflectance spectrum. Another neural network can map the low-dimensional real-valued vector. When using two neural networks, one neural network can be trained to map the spectra to the low-dimensional real-valued vector. Another neural network can be trained to predict the fixed parameter based on the critical parameters and the low-dimensional real-valued vector from the other neural network.

    DEVICE-LIKE METROLOGY TARGETS
    6.
    发明申请

    公开(公告)号:US20220197152A1

    公开(公告)日:2022-06-23

    申请号:US17689934

    申请日:2022-03-08

    IPC分类号: G03F7/20

    摘要: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

    Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction

    公开(公告)号:US11333621B2

    公开(公告)日:2022-05-17

    申请号:US16030849

    申请日:2018-07-09

    摘要: Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers. In another aspect, active focusing optics project programmed ranges of illumination wavelengths, angles of incidence, and azimuth angles, or any combination thereof, onto a metrology area, either simultaneously or sequentially.