Invention Grant
- Patent Title: Low conductance self-shielding insulator for ion implantation systems
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Application No.: US16100645Application Date: 2018-08-10
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Publication No.: US10679818B2Publication Date: 2020-06-09
- Inventor: John F. Baggett , Neil Colvin
- Applicant: Axcelis Technologies, Inc.
- Applicant Address: US MA Beverly
- Assignee: Axcelis Technologies, Inc.
- Current Assignee: Axcelis Technologies, Inc.
- Current Assignee Address: US MA Beverly
- Agency: Eschweiler & Potashnik LLC
- Main IPC: H01J37/08
- IPC: H01J37/08 ; H01J37/317

Abstract:
An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.
Public/Granted literature
- US20180350553A1 LOW CONDUCTANCE SELF-SHIELDING INSULATOR FOR ION IMPLANTATION SYSTEMS Public/Granted day:2018-12-06
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