Invention Grant
- Patent Title: Semiconductor structure with high resistivity wafer and fabricating method of bonding the same
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Application No.: US16167501Application Date: 2018-10-22
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Publication No.: US10679944B2Publication Date: 2020-06-09
- Inventor: Purakh Raj Verma , Kuo-Yuh Yang , Chia-Huei Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7962666d
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/00 ; H01L23/522 ; H01L23/31 ; H01L23/29 ; H01L21/00 ; H01L21/02
Abstract:
A semiconductor structure with a high resistivity wafer includes a device wafer. The device wafer includes a front side and a back side. A semiconductor element is disposed on the front side. An interlayer dielectric covers the front side. A high resistivity wafer consists of an insulating material. A dielectric layer encapsulates the high resistivity wafer. The dielectric layer contacts the interlayer dielectric.
Public/Granted literature
- US20200098690A1 SEMICONDUCTOR STRUCTURE WITH HIGH RESISTIVITY WAFER AND FABRICATING METHOD OF BONDING THE SAME Public/Granted day:2020-03-26
Information query
IPC分类:
