发明授权
- 专利标题: Lithography method
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申请号: US16516452申请日: 2019-07-19
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公开(公告)号: US10684561B2公开(公告)日: 2020-06-16
- 发明人: Hao-Yu Lan , Po-Chung Cheng , Ching-Juinn Huang , Tzung-Chi Fu , Tsung-Yen Lee
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: McClure, Qualey & Rodack, LLP
- 主分类号: G03F9/00
- IPC分类号: G03F9/00
摘要:
A method includes the following operations. A reference image of a mask having a plurality of mapping marks is acquired. A lithography exposing process is performed by a scanner with the mask to a photoresist layer which is formed on a substrate. Performing the lithography exposing process includes mapping a real-time image of the mask with the reference image of the mask.
公开/授权文献
- US20200133143A1 LITHOGRAPHY METHOD 公开/授权日:2020-04-30
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