Lithography system and method
    2.
    发明授权

    公开(公告)号:US12124178B2

    公开(公告)日:2024-10-22

    申请号:US18310483

    申请日:2023-05-01

    IPC分类号: G03F9/00

    CPC分类号: G03F9/7019

    摘要: A system is provided. The system includes an exposing device configured to generate a real-time image, including multiple first align marks, of a mask and an adjusting device configured to adjust an off-set of the mask from a pre-determined position to be smaller than a minimum aligning distance according to the first align marks and multiple align marks on a substrate, and further to move the mask closer to the pre-determined position to have a displacement, less than a minimum mapping distance, from the pre-determined position according to the real-time image and a reference image of the mask.

    Lithography system and lithography method

    公开(公告)号:US10678148B2

    公开(公告)日:2020-06-09

    申请号:US16279237

    申请日:2019-02-19

    IPC分类号: G03B27/52 G03F7/20

    摘要: A lithography system is provided and includes a light source device configured to emit a processing light beam onto the semiconductor wafer, to generate a penetrating light beam and a reflected light beam. The lithography system further includes a detecting module having a first detector and a second detector. The first detector is configured to receive the penetrating light beam to generate first power data, and the second detector is configured to receive the reflected light beam to generate second power data. The lithography system also includes a monitoring device configured to calculate absorbed power data of the semiconductor wafer according to the first power data, the second power data and reference power data of a reference light beam and configured to compensate for a pattern formed on the semiconductor wafer resulting from the processing light beam according to the absorbed power data and reference information.

    Lithography system and method
    7.
    发明授权

    公开(公告)号:US11675280B2

    公开(公告)日:2023-06-13

    申请号:US17459357

    申请日:2021-08-27

    IPC分类号: G03F9/00

    CPC分类号: G03F9/7019

    摘要: A system is disclosed. The system includes a cleaning device and a scanner device. The cleaning device is configured to clean a mask. The scanner device is coupled to the cleaning device and is configured to receive the mask, a reference image and a real-time image that is captured at the mask. The reference image includes at least one first mark image having a plurality of mapping marks on the mask. The real-time image includes at least one second mark image having the plurality of mapping marks on the mask. The scanner device is configured to map the at least one second mark image in the real-time image with the at least one first image in the reference image, when a lithography exposing process is performed. A method is also disclosed herein.

    Lithography system and method
    8.
    发明授权

    公开(公告)号:US11106146B2

    公开(公告)日:2021-08-31

    申请号:US16901506

    申请日:2020-06-15

    IPC分类号: G03F9/00

    摘要: A system is disclosed. The system includes a cleaning device and a scanner device. The cleaning device is configured to clean a mask. The scanner device is coupled to the cleaning device and is configured to receive the mask, a reference image and a real-time image that is captured at the mask. The reference image includes at least one first mark image having a plurality of mapping marks on the mask. The real-time image includes at least one second mark image having the plurality of mapping marks on the mask. The scanner device is configured to map the at least one second mark image in the real-time image with the at least one first image in the reference image, when a lithography exposing process is performed. A method is also disclosed herein.