Invention Grant
- Patent Title: Integrated circuit comprising an antifuse structure and method of realizing
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Application No.: US16270356Application Date: 2019-02-07
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Publication No.: US10685912B2Publication Date: 2020-06-16
- Inventor: Pascal Fornara , Christian Rivero
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater Matsil, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@19fd8d8b
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L21/768 ; H01L23/522

Abstract:
An integrated circuit includes a substrate; an interconnect portion disposed over the substrate, the interconnect portion comprising multiple metallization levels separated by an insulating region; and an antifuse structure coated with a portion of the insulating region, the antifuse structure comprising a beam held at two different points by two arms, a body, and an antifuse insulating zone, the beam, the body and the arms being metal and located within a same metallization level, the body and the beam mutually making contact via the antifuse insulating zone, the antifuse insulating zone configured to undergo breakdown in the presence of a breakdown potential difference between the body and the beam.
Public/Granted literature
- US20190172785A1 Integrated Circuit Comprising an Antifuse Structure and Method of Realizing Public/Granted day:2019-06-06
Information query
IPC分类: