Invention Grant
- Patent Title: Methods and systems for measurement of thick films and high aspect ratio structures
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Application No.: US15896978Application Date: 2018-02-14
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Publication No.: US10690602B2Publication Date: 2020-06-23
- Inventor: Noam Sapiens , Shankar Krishnan , David Y. Wang , Alexander Buettner , Kerstin Purrucker , Kevin A. Peterlinz
- Applicant: KLA-Tencor Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Spano Law Group
- Agent Joseph S. Spano
- Main IPC: G01N21/95
- IPC: G01N21/95 ; G01B11/06 ; G01J3/42 ; G01N21/956 ; H01L21/66 ; G01J3/02 ; G01J3/36 ; G01J3/10 ; G01J3/28 ; G01N21/84 ; G01N21/21

Abstract:
Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.
Public/Granted literature
- US20180238814A1 Methods And Systems For Measurement Of Thick Films And High Aspect Ratio Structures Public/Granted day:2018-08-23
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