Invention Grant
- Patent Title: Interface method of memory system, interface circuitry and memory module
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Application No.: US15812497Application Date: 2017-11-14
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Publication No.: US10692566B2Publication Date: 2020-06-23
- Inventor: Sun-Young Lim , In-Su Choi , Dimin Niu , In-Dong Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7ccc5dc
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C11/4096 ; G11C7/10 ; G11C29/02 ; G06F11/20 ; G11C29/52 ; G11C5/04 ; G11C29/04

Abstract:
A memory system may comprise a plurality of data strobe transfer paths assigned to a plurality of data transfer paths such that each of the plurality of data strobe transfer paths may be shared by the plurality of data transfer paths. At least one selected data strobe transfer path is selected and data signals transferred through the plurality of data transfer paths are sampled using at least one data strobe signal transferred through the selected data strobe transfer path. Reliability of data communication is enhanced through a redundant data strobe scheme by assigning a plurality of data strobe transfer paths to a plurality of data transfer paths such that the plurality of data strobe transfer paths may be shared by the plurality of data transfer paths.
Public/Granted literature
- US20180144786A1 INTERFACE METHOD OF MEMORY SYSTEM, INTERFACE CIRCUITRY AND MEMORY MODULE Public/Granted day:2018-05-24
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