Silicon-controlled rectifiers and methods for forming a silicon-controlled rectifier. A first well of a first conductivity type is arranged in a substrate, and second and third wells of a second conductivity type are arranged in the substrate between the first well and the top surface of the substrate. A deep trench isolation region is laterally arranged between the first well of the second conductivity type and the second well of the second conductivity type. The second well is adjoined with the first well along a first interface, the third well is adjoined with the first well along a second interface, and the deep trench isolation region extends the top surface of the substrate past the first interface and the second interface and into the first well. A doped region of the first conductivity type is arranged in the substrate between the second well and the top surface of the substrate.