Invention Grant
- Patent Title: Semiconductor die with back-side integrated inductive component
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Application No.: US16023377Application Date: 2018-06-29
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Publication No.: US10692964B2Publication Date: 2020-06-23
- Inventor: Benjamin Stassen Cook , Roberto Giampiero Massolini , Daniel Carothers
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Michael A. Davis, Jr.; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L49/02 ; H01L23/495 ; H01L27/06 ; H01L21/3065 ; H01L21/768 ; H01L23/498 ; H01L23/00
Abstract:
An integrated circuit (IC) includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front side surface. An inductive structure is located within a deep trench formed in the circuit substrate below the backside surface. The inductive structure is coupled to the active circuitry.
Public/Granted literature
- US20180323254A1 SEMICONDUCTOR DIE WITH BACK-SIDE INTEGRATED INDUCTIVE COMPONENT Public/Granted day:2018-11-08
Information query
IPC分类:
