Invention Grant
- Patent Title: Bidirectional transistor having a low resistance heterojunction in an on state
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Application No.: US16567088Application Date: 2019-09-11
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Publication No.: US10692997B2Publication Date: 2020-06-23
- Inventor: Rene Escoffier
- Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@29a860ec
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/205 ; H01L29/417 ; H01L29/423 ; H01L29/20 ; H01L29/66 ; H03K17/687 ; H01L21/285 ; H01L21/02
Abstract:
A bidirectional heterojunction transistor includes first and second conduction electrodes, first and second gates between the conduction electrodes, and first and second reference electrodes between the gates. The transistor further includes a superposition of semiconductor layers, including channel zones that are vertically in line with the gates, a first conduction zone between the first conduction electrode and the first channel zone, and a second conduction zone between the second conduction electrode and the second channel zone. The superposition of semiconductor layers also includes a third conduction zone that is separated from the first and second conduction zones by the first and second channel zones, respectively, and a first electrical connection that is connected to the third conduction zone and to the first reference electrode.
Public/Granted literature
- US20200098908A1 BIDIRECTIONAL TRANSISTOR HAVING A LOW RESISTANCE HETEROJUNCTION IN AN ON STATE Public/Granted day:2020-03-26
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