Invention Grant
- Patent Title: Solenoid structure with conductive pillar technology
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Application No.: US15982655Application Date: 2018-05-17
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Publication No.: US10693432B2Publication Date: 2020-06-23
- Inventor: Nosun Park , Changhan Hobie Yun , Jonghae Kim , Niranjan Sunil Mudakatte , Xiaoju Yu , Wei-Chuan Chen
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMMM Incorporated
- Current Assignee: QUALCOMMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth Shaw LLP
- Main IPC: H03H7/01
- IPC: H03H7/01 ; H01F27/40 ; H01L21/56 ; H01L21/683 ; H01L23/29 ; H01L23/31 ; H01L23/00 ; H01L25/16 ; H01L27/01 ; H01L49/02 ; H03H1/00 ; H03H3/00

Abstract:
A three-dimensional (3D) solenoid structure includes a first inductor portion having a first surface and a second surface opposite the first surface. The 3D solenoid structure further includes a first capacitor portion, a first inductor pillar, at least one capacitor pillar, a second inductor portion, a second inductor pillar and a first inductor bonding interface. The first inductor pillar is coupled to the first surface of the first inductor portion. The capacitor pillar(s) is coupled to the first capacitor portion. The second inductor portion includes a first surface and a second surface opposite the first surface. The second inductor pillar is coupled to the first surface of the second inductor portion. The first inductor bonding interface, between the first inductor pillar and the second inductor pillar, couples together the first inductor portion and the second inductor portion.
Public/Granted literature
- US20190356294A1 SOLENOID STRUCTURE WITH CONDUCTIVE PILLAR TECHNOLOGY Public/Granted day:2019-11-21
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