- Patent Title: Semiconductor device, electronic component, and electronic device
-
Application No.: US16362777Application Date: 2019-03-25
-
Publication No.: US10693448B2Publication Date: 2020-06-23
- Inventor: Kiyoshi Kato , Yutaka Shionoiri , Tomoaki Atsumi , Takanori Matsuzaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@33369bfa com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@e3fe63e
- Main IPC: H03K5/24
- IPC: H03K5/24 ; G11C5/14 ; H01L27/00 ; H01L27/108 ; H01L27/146 ; H01L49/02 ; H01L21/78 ; H01L23/498

Abstract:
Provided is a semiconductor device that can directly compare two negative potentials. The semiconductor device includes a first to a third transistor and a load and is configured to compare a first negative potential and a second negative potential. The first negative potential and the second negative potential are input to a gate of the first transistor and a gate of the second transistor, respectively. Each drain of the first transistor and the second transistor is electrically connected to the load. The third transistor serves as a current source. The first transistor and the second transistor each include a backgate. A positive potential is input to the backgates.
Public/Granted literature
- US20190222209A1 SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE Public/Granted day:2019-07-18
Information query
IPC分类: