A solid-state imaging device, in which a signal holding part can hold a signal with respect to a voltage signal corresponding to an accumulated charge in a photoelectric conversion element of a photodiode PD1 which is transferred to an output node of a floating diffusion FD1 in a transfer period after an integration period and a signal with respect to a voltage signal corresponding to an overflow charge overflowing to the output node of the floating diffusion FD1 from at least the photodiode PD1 in any period among the photoelectric conversion element of the photodiode PD1 and the storage capacity element of the storage capacitor. Due to this, substantially, it becomes possible to realize a broader dynamic range and higher frame rate.