Invention Grant
- Patent Title: Power device
-
Application No.: US16414186Application Date: 2019-05-16
-
Publication No.: US10700193B2Publication Date: 2020-06-30
- Inventor: Jae-hyun Yoo , Ui-hui Kwon , Da-won Jeong , Jae-ho Kim , Jun-hyeok Kim , Kang-hyun Baek , Kyu-ok Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey and Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@a3cae1b
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/423 ; H01L29/40 ; H01L29/06

Abstract:
A power device includes a drift layer of a second conductivity type located on a semiconductor layer of a first conductivity type, a first source region of the second conductivity type and a second source region of the second conductivity type, located on the drift layer to be apart from each other, and a gate electrode on the drift layer between the first and second source regions with a gate insulating layer between the gate electrode and the drift layer, wherein the gate electrode includes a first gate electrode and a second gate electrode adjacent to the first source region and the second source region, respectively, and a third gate electrode between the first and second gate electrodes, wherein the third gate electrode is floated or grounded.
Public/Granted literature
- US20200144411A1 POWER DEVICE Public/Granted day:2020-05-07
Information query
IPC分类: