公开(公告)号：US20200144411A1

公开(公告)日：2020-05-07

申请号：US16414186

申请日：2019-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyun YOO ,  Ui-hui Kwon ,  Da-won Jeong ,  Jae-ho Kim ,  Jun-hyeok Kim ,  Kang-hyun Baek ,  Kyu-ok Lee

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423

Abstract: A power device includes a drift layer of a second conductivity type located on a semiconductor layer of a first conductivity type, a first source region of the second conductivity type and a second source region of the second conductivity type, located on the drift layer to be apart from each other, and a gate electrode on the drift layer between the first and second source regions with a gate insulating layer between the gate electrode and the drift layer, wherein the gate electrode includes a first gate electrode and a second gate electrode adjacent to the first source region and the second source region, respectively, and a third gate electrode between the first and second gate electrodes, wherein the third gate electrode is floated or grounded.

公开(公告)号：US10700193B2

公开(公告)日：2020-06-30

申请号：US16414186

申请日：2019-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyun Yoo ,  Ui-hui Kwon ,  Da-won Jeong ,  Jae-ho Kim ,  Jun-hyeok Kim ,  Kang-hyun Baek ,  Kyu-ok Lee

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/423 ,  H01L29/40 ,  H01L29/06

Abstract: A power device includes a drift layer of a second conductivity type located on a semiconductor layer of a first conductivity type, a first source region of the second conductivity type and a second source region of the second conductivity type, located on the drift layer to be apart from each other, and a gate electrode on the drift layer between the first and second source regions with a gate insulating layer between the gate electrode and the drift layer, wherein the gate electrode includes a first gate electrode and a second gate electrode adjacent to the first source region and the second source region, respectively, and a third gate electrode between the first and second gate electrodes, wherein the third gate electrode is floated or grounded.

公开(公告)号：US10529779B2

公开(公告)日：2020-01-07

申请号：US15869466

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yo-han Kim ,  Jong-wook Jeon ,  Ui-hui Kwon

IPC: G06F17/50 ,  H01L27/30 ,  H01L27/146 ,  H01L33/08 ,  H01L27/12

Abstract: A method of manufacturing an image sensor that includes first and second semiconductor chips includes receiving manufacturing data respectively associated with the first and second semiconductor chips, processing the manufacturing data to determine a capacitance and a resistance of a pixel signal transmission line to which a pixel signal generated by each pixel of the plurality of pixels is transmitted, where the capacitance and the resistance corresponding to position information associated with each pixel of the plurality of pixels, and determining predicted characteristics of the image sensor based on the determined capacitance and resistance, prior to the first semiconductor chip being electrically connected to the second semiconductor chip. The first semiconductor chip may be electrically connected to the second semiconductor chip to form the image sensor based on a determination that the predicted characteristics of the image sensor at least meet a particular set of one or more target values.