Invention Grant
- Patent Title: Gain-dependent impedance matching and linearity
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Application No.: US16200405Application Date: 2018-11-26
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Publication No.: US10700655B2Publication Date: 2020-06-30
- Inventor: Alaaeldien Mohamed Abdelrazek Medra , David Zixiang Yang , Kevin Hsi Huai Wang , Chen Zhai , Francesco Gatta
- Applicant: Qualcomm Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Colby Nipper/QUALCOMM Incorporated
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F9/02 ; H03F3/195 ; H03F1/56 ; H03F1/22

Abstract:
An integrated circuit is disclosed for gain-dependent impedance matching and linearity. The integrated circuit includes at least two amplifier branches, an input inductor, and at least two degeneration inductors. Each amplifier branch includes a node, an input transistor, and a cascode stage connected between a drain of the input transistor and the node. Respective nodes of the at least two amplifier branches are connected together and respective gates of the input transistors of the at least two amplifier branches are connected together. The input inductor is connected to the respective gates, and the at least two degeneration inductors are connected between respective sources of the input transistors of the at least two amplifier branches and a ground. The at least two degeneration inductors are configured to establish a magnetic coupling with the input inductor and establish another magnetic coupling between each other.
Public/Granted literature
- US20190158048A1 Gain-Dependent Impedance Matching and Linearity Public/Granted day:2019-05-23
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