Invention Grant
- Patent Title: Method of measuring a parameter of interest, inspection apparatus, lithographic system and device manufacturing method
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Application No.: US15977866Application Date: 2018-05-11
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Publication No.: US10705430B2Publication Date: 2020-07-07
- Inventor: Gonzalo Roberto Sanguinetti , Nicolas Mauricio Weiss , Jean-Pierre Agnes Henricus Marie Vaessen
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A method of measuring a parameter of interest relating to a structure formed by a process on a substrate, and associated apparatuses. The method includes measuring the structure with measurement radiation including a first illumination acquisition setting (determining one or more selected from: a wavelength, a polarization or an incident angle of the measurement radiation) to obtain a first measurement value for the structure. The method further includes estimating, by applying a correction model to the first measurement value, at least a second measurement value for the structure corresponding to measurement of the structure with a second illumination acquisition setting different from the first illumination acquisition setting.
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