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公开(公告)号：US11022897B2
公开(公告)日：2021-06-01
申请号：US16194769
申请日：2018-11-19
发明人： Joannes Jitse Venselaar , Anagnostis Tsiatmas , Samee Ur Rehman , Paul Christiaan Hinnen , Jean-Pierre Agnes Henricus Marie Vaessen , Nicolas Mauricio Weiss , Gonzalo Roberto Sanguinetti , Thomai Zacharopoulou , Martijn Maria Zaal
摘要： Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.
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公开(公告)号：US10859923B2
公开(公告)日：2020-12-08
申请号：US16792267
申请日：2020-02-16
摘要： Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.
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公开(公告)号：US11604419B2
公开(公告)日：2023-03-14
申请号：US17241142
申请日：2021-04-27
发明人： Joannes Jitse Venselaar , Anagnostis Tsiatmas , Samee Ur Rehman , Paul Christiaan Hinnen , Jean-Pierre Agnes Henricus Marie Vaessen , Nicolas Mauricio Weiss , Gonzalo Roberto Sanguinetti , Thomai Zacharopoulou , Martijn Maria Zaal
摘要： Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.
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公开(公告)号：US10564552B2
公开(公告)日：2020-02-18
申请号：US16007112
申请日：2018-06-13
摘要： Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.
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公开(公告)号：US11448974B2
公开(公告)日：2022-09-20
申请号：US17207936
申请日：2021-03-22
摘要： A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.
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公开(公告)号：US20190171115A1
公开(公告)日：2019-06-06
申请号：US16194769
申请日：2018-11-19
发明人： Joannes Jitse VENSELAAR , Anagnostis Tsiatmas , Samee Ur Rehman , Paul Christiaan Hinnen , Jean-Pierre Agnes Henricus Marie Vaessen , Nicolas Mauricio Weiss , Gonzalo Roberto Sanguinetti , Thomai Zacharopoulou , Martijn Maria Zaal
摘要： Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.
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公开(公告)号：US10990020B2
公开(公告)日：2021-04-27
申请号：US15964643
申请日：2018-04-27
摘要： A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.
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公开(公告)号：US10705430B2
公开(公告)日：2020-07-07
申请号：US15977866
申请日：2018-05-11
发明人： Gonzalo Roberto Sanguinetti , Nicolas Mauricio Weiss , Jean-Pierre Agnes Henricus Marie Vaessen
IPC分类号： G03F7/20
摘要： A method of measuring a parameter of interest relating to a structure formed by a process on a substrate, and associated apparatuses. The method includes measuring the structure with measurement radiation including a first illumination acquisition setting (determining one or more selected from: a wavelength, a polarization or an incident angle of the measurement radiation) to obtain a first measurement value for the structure. The method further includes estimating, by applying a correction model to the first measurement value, at least a second measurement value for the structure corresponding to measurement of the structure with a second illumination acquisition setting different from the first illumination acquisition setting.
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