- 专利标题： Elbow contact for field-effect transistor and manufacture thereof
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申请号： US16587980申请日： 2019-09-30
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公开(公告)号： US10707148B2公开(公告)日： 2020-07-07
- 发明人: Guy Cohen , Christian Lavoie , Ahmet Serkan Ozcan , Paul Solomon
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： McGinn IP Law Group, PLLC
- 代理商 L. Jeffrey Kelly, Esq.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/768 ; H01L21/02 ; H01L21/48
摘要：
A field-effect transistor (FET) and method of manufacture thereof include patterning a mask above a source and drain of a FET to form holes in the mask, growing epitaxial structures from the holes in the mask, and growing a doped epitaxial shell to coat sidewalls of the epitaxial structures.
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