Invention Grant
- Patent Title: Semiconductor device with a bridge insulation layer
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Application No.: US16156845Application Date: 2018-10-10
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Publication No.: US10707155B2Publication Date: 2020-07-07
- Inventor: Hajime Okuda , Yoshinori Fukuda
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@72675825
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/762 ; H01L21/76 ; H01L23/00

Abstract:
A semiconductor device includes a semiconductor layer that has a main surface including a defined region defined by a trench, a trench insulation layer formed in the trench, a field insulation layer that covers the defined region away from the trench, and a bridge insulation layer that is formed in a region between the trench and the field insulation layer in the defined region and that is connected to the trench insulation layer and to the field insulation layer.
Public/Granted literature
- US20190115290A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-04-18
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