Invention Grant
- Patent Title: Ferroelectric memory and methods of forming the same
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Application No.: US15691806Application Date: 2017-08-31
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Publication No.: US10707220B2Publication Date: 2020-07-07
- Inventor: Ashonita A. Chavan , Alessandro Calderoni , D. V. Nirmal Ramaswamy
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L27/11507
- IPC: H01L27/11507 ; H01L27/108 ; H01L29/423 ; H01L49/02
Abstract:
Ferroelectric memory and methods of forming the same are provided. An example memory cell can include a buried recessed access device (BRAD) formed in a substrate and a ferroelectric capacitor formed on the BRAD.
Public/Granted literature
- US20180006044A1 FERROELECTRIC MEMORY AND METHODS OF FORMING THE SAME Public/Granted day:2018-01-04
Information query
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