Invention Grant
- Patent Title: Source side program, method, and apparatus for 3D NAND
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Application No.: US16453268Application Date: 2019-06-26
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Publication No.: US10707226B1Publication Date: 2020-07-07
- Inventor: Xiang Yang , Brian Murphy , Lito De La Rama
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Agency: Dickinson Wright PLLC
- Agent Steven Hurles
- Main IPC: G11C16/34
- IPC: G11C16/34 ; H01L27/1157 ; G11C16/08 ; G11C16/12 ; G11C16/04

Abstract:
A source side programming method and system are provided. A bad trigger block, of a plurality of blocks of a memory array, may be detected by determining a threshold voltage distribution of a drain side select gate of a block and determining whether the distribution is abnormal. If the distribution is abnormal, the block is a bad trigger block which may cause a failure in another block. IF the block is a bad trigger block, source side programming is performed on at least one word line of the bad trigger block by applying a non-zero voltage to at least one source side word line of the bad trigger block via a source side line.
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