Invention Grant
- Patent Title: Charge pump, and high voltage generator and flash memory device having the same
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Application No.: US16414972Application Date: 2019-05-17
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Publication No.: US10707749B2Publication Date: 2020-07-07
- Inventor: Ho Young Shin
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@13dbfd9e com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3a8938d
- Main IPC: H02M3/07
- IPC: H02M3/07 ; G11C16/30 ; G11C16/14 ; G11C16/08

Abstract:
A charge pump includes a first pumping capacitor configured to pump a first voltage of a first node, in response to a first clock signal, a gate pumping capacitor configured to pump a second voltage of a second node, in response to a second clock signal, a charge transfer transistor including a first source connected to a first one of a third node and the first node, a first gate connected to the second node, and a first drain connected to a remaining one of the first node and the third node, a gate control transistor including a second source connected to the first one of the third node and the first node, a second gate connected to the remaining one of the first node and the third node, and a second drain connected to the second node, and a gate discharge or charge unit.
Public/Granted literature
- US20200044564A1 CHARGE PUMP, AND HIGH VOLTAGE GENERATOR AND FLASH MEMORY DEVICE HAVING THE SAME Public/Granted day:2020-02-06
Information query
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