- 专利标题: Semiconductor light emitting element
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申请号: US16377321申请日: 2019-04-08
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公开(公告)号: US10714898B2公开(公告)日: 2020-07-14
- 发明人: Takeshi Kanzaki , Hiroki Miyachi , Ryoichi Kashiro
- 申请人: HAMAMATSU PHOTONICS K.K.
- 申请人地址: JP Hamamatsu-shi, Shizuoka
- 专利权人: HAMAMATSU PHOTONICS K.K.
- 当前专利权人: HAMAMATSU PHOTONICS K.K.
- 当前专利权人地址: JP Hamamatsu-shi, Shizuoka
- 代理机构: Faegre Drinker Biddle & Reath LLP
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2eab6e3c
- 主分类号: H01S5/18
- IPC分类号: H01S5/18 ; H01S5/42
摘要:
The present semiconductor light emitting element is a semiconductor light emitting element including an active layer, an upper cladding layer and a lower cladding layer that sandwich the active layer, and a phase modulation layer optically coupled to the active layer, in which the phase modulation layer includes a basic layer and a plurality of different refractive index regions that are different in refractive index from the basic layer, and the plurality of different refractive index regions are disposed so as to form a pattern in a region outside a light line on a reciprocal lattice space in the phase modulation layer.
公开/授权文献
- US20190319428A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 公开/授权日:2019-10-17
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