Invention Grant
- Patent Title: High performance fluxgate device
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Application No.: US14557611Application Date: 2014-12-02
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Publication No.: US10718826B2Publication Date: 2020-07-21
- Inventor: Mona M. Eissa , Dok Won Lee
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: G01R33/04
- IPC: G01R33/04 ; G01R33/00

Abstract:
An integrated circuit includes a fluxgate magnetometer. The magnetic core of the fluxgate magnetometer is encapsulated with a layer of encapsulant of a nonmagnetic metal or a nonmagnetic alloy. The layer of encapsulate provides stress relaxation between the magnetic core material and the surrounding dielectric. A method for forming an integrated circuit has the magnetic core of a fluxgate magnetometer encapsulated with a layer of a nonmagnetic metal or nonmagnetic alloy to eliminate delamination and to substantially reduce cracking of the dielectric that surrounds the magnetic core.
Public/Granted literature
- US10663534B2 High performance fluxgate device Public/Granted day:2020-05-26
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