Invention Grant
- Patent Title: Metal oxide and semiconductor device
-
Application No.: US15637081Application Date: 2017-06-29
-
Publication No.: US10734413B2Publication Date: 2020-08-04
- Inventor: Shunpei Yamazaki , Motoki Nakashima , Haruyuki Baba
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@65db2a23
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L29/66 ; G02F1/1368 ; G02F1/1362

Abstract:
A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.
Public/Granted literature
- US20180012910A1 METAL OXIDE AND SEMICONDUCTOR DEVICE Public/Granted day:2018-01-11
Information query
IPC分类: