Invention Grant
- Patent Title: Semiconductor device including through via, semiconductor package, and method of fabricating the same
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Application No.: US16233900Application Date: 2018-12-27
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Publication No.: US10734430B2Publication Date: 2020-08-04
- Inventor: Yi Koan Hong , Taeseong Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5cf636a2
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L27/146 ; H01L21/768 ; H01L23/00
Abstract:
A semiconductor device including a first structure including a first conductive pattern, the first conductive pattern exposed on an upper portion of the first structure, a mold layer covering the first conductive pattern, a second structure on the mold layer, and a through via penetrating the second structure and the mold layer, the through via electrically connected to the first conductive pattern, the through via including a first via segment in the second structure and a second via segment in the mold layer, the second via segment connected to the first via segment, an upper portion of the second via segment having a first width and a middle portion of the second via segment having a second width greater than the first width may be provided.
Public/Granted literature
- US20190386051A1 SEMICONDUCTOR DEVICE INCLUDING THROUGH VIA, SEMICONDUCTOR PACKAGE, AND METHOD OF FABRICATING THE SAME Public/Granted day:2019-12-19
Information query
IPC分类:
