Invention Grant
- Patent Title: High performance, high electron mobility transistors with graphene hole extraction contacts
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Application No.: US15806724Application Date: 2017-11-08
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Publication No.: US10734537B2Publication Date: 2020-08-04
- Inventor: Zhenqiang Ma , Tzu-Hsuan Chang
- Applicant: Wisconsin Alumni Research Foundation
- Applicant Address: US WI Madison
- Assignee: Wisconsin Alumni Research Foundation
- Current Assignee: Wisconsin Alumni Research Foundation
- Current Assignee Address: US WI Madison
- Agency: Bell & Manning, LLC
- Agent Michelle Manning
- Main IPC: H01L31/0352
- IPC: H01L31/0352 ; H01L31/0304 ; H01L31/11 ; G01J1/42 ; H01L31/0224 ; H01L31/108 ; G01J1/44
Abstract:
Radiation detectors based on high electron mobility transistors (HEMTs) are provided. Methods for detecting ultraviolet radiation using the HEMTs are also provided. The transistors are constructed from an intrinsic high bandgap semiconductor material with a built-in polarization field sandwiched between graphene and a two-dimensional electron gas (2DEG).
Public/Granted literature
- US20190140120A1 HIGH PERFORMANCE, HIGH ELECTRON MOBILITY TRANSISTORS WITH GRAPHENE HOLE EXTRACTION CONTACTS Public/Granted day:2019-05-09
Information query
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