Flexible transistors with near-junction heat dissipation

    公开(公告)号:US11495512B2

    公开(公告)日:2022-11-08

    申请号:US16862825

    申请日:2020-04-30

    摘要: Flexible transistors and electronic circuits incorporating the transistors are provided. The flexible transistors promote heat dissipation from the active regions of the transistors while preserving their mechanical flexibility and high-frequency performance. The transistor designs utilize thru-substrate vias (TSVs) beneath the active regions of thin-film type transistors on thin flexible substrates. To promote rapid heat dissipation, the TSVs are coated with a material having a high thermal conductivity that transfers heat from the active region of the transistor to a large-area ground.