Invention Grant
- Patent Title: Metrology method and apparatus, substrate, lithographic system and device manufacturing method
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Application No.: US16185062Application Date: 2018-11-09
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Publication No.: US10739687B2Publication Date: 2020-08-11
- Inventor: Hendrik Jan Hidde Smilde , Bastiaan Onne Fagginger Auer , Davit Harutyunyan , Patrick Warnaar
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5ad07466
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F9/00 ; G01B9/04 ; G01N21/88

Abstract:
In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.
Public/Granted literature
- US20190094712A1 METROLOGY METHOD AND APPARATUS, SUBSTRATE, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD Public/Granted day:2019-03-28
Information query
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