Invention Grant
- Patent Title: Self-aligned sacrificial epitaxial capping for trench silicide
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Application No.: US15719014Application Date: 2017-09-28
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Publication No.: US10741556B2Publication Date: 2020-08-11
- Inventor: George R. Mulfinger , Lakshmanan H. Vanamurthy , Scott Beasor , Timothy J. McArdle , Judson R. Holt , Hao Zhang
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/08 ; H01L21/8238 ; H01L29/78 ; H01L29/165 ; H01L21/02 ; H01L29/167 ; H01L21/285 ; H01L29/66 ; H01L21/265 ; H01L29/45 ; H01L23/485 ; H01L21/768 ; H01L29/417
Abstract:
A method for forming a self-aligned sacrificial epitaxial cap for trench silicide and the resulting device are provided. Embodiments include a Si fin formed in a PFET region; a pair of Si fins formed in a NFET region; epitaxial S/D regions formed on ends of the Si fins; a replacement metal gate formed over the Si fins in the PFET and NFET regions; metal silicide trenches formed over the epitaxial S/D regions in the PFET and NEFT regions; a metal layer formed over top surfaces of the S/D region in the PFET region and top and bottom surfaces of the S/D regions in the NFET region, wherein the epitaxial S/D regions in the PFET and NFET regions are diamond shaped in cross-sectional view.
Public/Granted literature
- US20180233505A1 SELF-ALIGNED SACRIFICIAL EPITAXIAL CAPPING FOR TRENCH SILICIDE Public/Granted day:2018-08-16
Information query
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