Invention Grant
- Patent Title: Semiconductor devices having a fin channel arranged between source and drift regions and methods of manufacturing the same
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Application No.: US16137739Application Date: 2018-09-21
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Publication No.: US10741685B2Publication Date: 2020-08-11
- Inventor: Robert Gauthier, Jr. , Souvick Mitra , Alain Loiseau , Tsai Tsung-Che , Mickey Yu , You Li
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Francois Pagette
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L29/06 ; H01L21/8234 ; H01L27/24

Abstract:
Structures for laterally-diffused metal-oxide-semiconductor devices and drain-extended metal-oxide-semiconductor devices, as well as methods of forming laterally-diffused metal-oxide-semiconductor devices and drain-extended metal-oxide-semiconductor devices. A gate electrode is arranged to extend about a semiconductor fin projecting from a substrate. A drain region is arranged in the substrate, and a source region is coupled with the semiconductor fin. The source region is arranged over the semiconductor fin. A drift region is arranged in the substrate between the drain region and the semiconductor fin. The drain region, source region, and drift region have a given conductivity type. The drift region has a lower electrical conductivity than the drain region.
Public/Granted literature
- US20200098909A1 VERTICAL CONSTRUCTIONS FOR DEVICES HAVING A DRIFT REGION Public/Granted day:2020-03-26
Information query
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