A strain gauge sensor includes a substrate, at least one resistor comprising a magnetoresistive material on the substrate. The magnetoresistive material exhibits a magnetostriction coefficient λ that is greater than or equal to () |2| parts per million (ppm) and an anisotropic magnetoresistance effect with an anisotropic magnetoresistance of greater than or equal to () 2% Δ R/R. The strain gauge sensor consists of a single layer of the magnetoresistive material. At least a first contact to the resistor provides a sensor input and a second contact to the resistor provides a sensor output.