Storage node contact structure of a memory device and manufacturing methods thereof

Invention Grant

US10756090B2 Storage node contact structure of a memory device and manufacturing methods thereof 有权

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Patent Title: Storage node contact structure of a memory device and manufacturing methods thereof
Application No.: US15922899

Application Date: 2018-03-15
Publication No.: US10756090B2

Publication Date: 2020-08-25
Inventor: Pin-Hong Chen , Tsun-Min Cheng , Chih-Chieh Tsai , Tzu-Chieh Chen , Kai-Jiun Chang , Chia-Chen Wu , Yi-An Huang , Yi-Wei Chen , Hsin-Fu Huang , Chi-Mao Hsu , Li-Wei Feng , Ying-Chiao Wang , Chung-Yen Feng
Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
Agent Winston Hsu
Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3a1639d4
Main IPC: H01L21/8242
IPC: H01L21/8242 ; H01L27/108 ; H01L23/532 ; H01L23/522 ; H01L21/285 ; H01L23/528 ; H01L21/768 ; H01L49/02 ; H01L21/02

Storage node contact structure of a memory device and manufacturing methods thereof

Abstract:

The present invention provides a storage node contact structure of a memory device comprising a substrate having a dielectric layer comprising a recess, a first tungsten metal layer, and an adhesive layer on the first tungsten metal layer and a second tungsten metal layer on the adhesive layer, wherein the second tungsten metal layer is formed by a physical vapor deposition (PVD).

Public/Granted literature

US20180301458A1 STORAGE NODE CONTACT STRUCTURE OF A MEMORY DEVICE AND MANUFACTURING METHODS THEREOF Public/Granted day:2018-10-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）