Invention Grant
- Patent Title: High power compound semiconductor field effect transistor devices with low doped drain
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Application No.: US15645188Application Date: 2017-07-10
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Publication No.: US10756206B2Publication Date: 2020-08-25
- Inventor: Bin Yang , Xia Li , Gengming Tao , Periannan Chidambaram
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778 ; H01L29/10 ; H01L29/205 ; H01L21/74 ; H01L23/66 ; H01L29/08 ; H03F3/24 ; H03F3/189 ; H04W88/02
Abstract:
A compound semiconductor field effect transistor may include a channel layer. The compound semiconductor transistor may also include a multi-layer epitaxial barrier layer on the channel layer. The channel layer may be on a doped buffer layer or on a first un-doped buffer layer. The compound semiconductor field effect transistor may further include a gate. The gate may be on a first tier of the multi-layer epitaxial barrier layer, and through a space between portions of a second tier of the multi-layer epitaxial barrier layer.
Public/Granted literature
- US20190013398A1 HIGH POWER COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR DEVICES WITH LOW DOPED DRAIN Public/Granted day:2019-01-10
Information query
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