Invention Grant
- Patent Title: Phase transition based resistive random-access memory
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Application No.: US16110376Application Date: 2018-08-23
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Publication No.: US10756263B2Publication Date: 2020-08-25
- Inventor: Joerg Appenzeller , Feng Zhang , Yuqi Zhu , Albert V. Davydov , Sergiy Krylyuk , Huairuo Zhang , Leonid A. Bendersky
- Applicant: Purdue Research Foundation , Gov. of the U.S. as Represented by Sec. of Comm. National Institute of Standards and Technology
- Applicant Address: US IN West Lafayette
- Assignee: Purdue Research Foundation
- Current Assignee: Purdue Research Foundation
- Current Assignee Address: US IN West Lafayette
- Agency: Piroozi-IP, LLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L45/00 ; G11C13/00
Abstract:
A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2Hd phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.
Public/Granted literature
- US20190363250A1 PHASE TRANSITION BASED RESISTIVE RANDOM-ACCESS MEMORY Public/Granted day:2019-11-28
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