Invention Grant
- Patent Title: Method to enhance the resolution of maskless lithography while maintaining a high image contrast
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Application No.: US16512975Application Date: 2019-07-16
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Publication No.: US10761430B2Publication Date: 2020-09-01
- Inventor: Christopher Dennis Bencher , Joseph R. Johnson
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
The embodiments described herein relate to a software application platform, which enhances image patterns resolution on a substrate. The application platform method includes running an algorithm to provide different target polygons for forming a pattern on a target. A minimum feature size which may be formed by a DMD is determined. For each target polygons smaller than the minimum feature size determining to line bias or shot bias the one or more target polygons to achieve an acceptable exposure contrast at the target polygon boundary. The one or more target polygons smaller than the minimum feature size are biased to form a digitized pattern on the substrate. Electromagnetic radiation is delivered to reflect off of a first mirror of the DMD when the centroid for the first mirror is within the one or more target polygons.
Public/Granted literature
- US20200089128A1 METHOD TO ENHANCE THE RESOLUTION OF MASKLESS LITHOGRAPHY WHILE MAINTAINING A HIGH IMAGE CONTRAST Public/Granted day:2020-03-19
Information query
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